SiC power semiconductor devices
Manufacturing Services
SiC Schottky Diodes, Planer or trench MOSFET, 10kV PiN Diodes
the performances reached the international leading level
Basic offer advanced SiC epitaxy material up to 250um and custom specific device fabrication.
Applications
NEWS CENTER

6月26日-28日,基本半導體成功參展PCIM?Asia 2018上海國際電力元件、可再生能源管理展覽會?;景氳?..

4月11日,在 2018 中國電子信息博覽會期間,“第三代半導體技術及應用高峰論壇”同期舉行。該論壇由國家集成電路...

4月9日上午,國家集成電路產業投資基金總裁丁文武一行蒞臨基本半導體考察調研?;景氳繼宥魯ね糝┦肯蚨∥奈浣檣?..

22F,Building II,Shenzhen Overseas Chinese High-Tech Venture Park,
No.29 Nanhuan Road, Nanshan District,Shenzhen 0755-22670439 [email protected]
Shenzhen BASiC Semiconductor Ltd.