As one of the Chinese wide bandgap semiconductor industry leaders BASiC Semiconductor Ltd. (BASiC for short) has been committed to the development and industrialization of silicon carbide power devices. The research and development headquarters of the company is in Shenzhen and set up a R&D center in Sweden. BASiC is one of the initiate units that launching the Shenzhen Research Institute for Third-Generation Semiconductors and jointly established the "Third Generation Semiconductor Materials and Devices R&D Center" with Research Institute of Tsinghua University in Shenzhen. By Integrating the overseas innovative technology and domestic industrial resources BASIC conduct research and development on the material preparation, chip design, manufacturing process, packaging test, driving application and other aspects of silicon carbide devices, covering all links of the industrial chain. Based on the unique 3D SiCTM technology, the performance of the BASiC’s SiC power devices has reached the international advanced level and can be widely used in the fields of new energy generation, EV, rail transit and smart power grids. Through introduction the overseas returnees and foreign experts, BASiC has established a world-class innovation team, which successfully selected into "Shenzhen high-level overseas talents innovation and entrepreneurship (Peacock Team)” in 2018. In the future BASiC will upgrade the industry with innovation, and lead China to achieve overtaking in the field of the wide bandgap semiconductor.